摘要
基于华虹0.18μm BCD工艺,设计了一种具有高PSRR的分段温度补偿带隙基准。电路采用5 V电源进行供电,基准输出电压为1.256 V。仿真结果表明,在-45~125℃的温度范围内,TT工艺角下,传统结构的温漂系数只能达到2.048×10^(-5)/℃。采用新型分段温度补偿的带隙基准的温漂系数为3.631×10^(-6)/℃,相比传统结构,温度系数降低了82.3%。静态功耗为220μW。PSRR在低频可达到-102 dB,在350 kHz处有最差PSRR,但仍有-30 dB。该带隙基准适用于高精度、大电流开关电源的模拟集成电路。
A segmented temperature compensated bandgap reference with high PSRR was designed in Huahong 0.18μm BCD technology.The circuit was powered by 5Vpower supply,and the reference output voltage was 1.256V.The simulation results show that in the temperature range of-45-+125℃,the temperature coefficient of the traditional structure is 2.048×10^(-5)/℃at the TT corner.The temperature coefficient of the bandgap reference with new piecewise temperature compensation is 3.631×10^(-6)/℃,which is 82.3%lower than that of the traditional structure.The static power consumption is 220μW.The PSRR can reach-102dB at low frequency,and the worst PSRR is-30dB at 350kHz.The bandgap reference is suitable for analog integrated circuits of high precision and high current switching power supply.
作者
陈杰浩
郭志弘
胡浩
CHEN Jiehao;GUO Zhihong;HU Hao(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China;School of Automation Engineering,University of Electronic Science and Technology of China,Chengdu 611173,P.R.China)
出处
《微电子学》
CAS
北大核心
2023年第1期8-13,共6页
Microelectronics
基金
电子薄膜与集成器件国家重点实验室开放基金(KFJJ201914)
关键词
带隙基准
高PSRR
分段温度补偿
bandgap reference
high PSRR
segmented temperature compensation
