摘要
通过^(60)Coγ射线辐照试验,研究了22 nm工艺体硅nFinFET的总剂量辐射效应,获得了总剂量辐射损伤随辐照偏置和器件结构的变化规律及损伤机理。研究结果表明,经过开态(ON)偏置辐照后器件阈值电压正向漂移,而传输态(TG)和关态(OFF)偏置辐照后器件阈值电压负向漂移;鳍数较少的器件阈值电压退化程度较大。通过分析陷阱电荷作用过程,揭示了产生上述试验现象的原因。
The total ionizing dose effect of 22 nm bulk silicon nFinFET was investigated by60Coγirradiation experiment.The variation of total dose radiation damage with irradiation bias and device structure was obtained,and the damage mechanism was revealed.The experimental results show that the threshold voltage of the device shift positively after ON bias irradiation,while the threshold voltage of the device shift negatively after TG and OFF bias irradiation.The threshold voltage degradation of the device with fewer fin number is greater than that of device with more fin number.By analyzing the action process of trap charge induced by irradiation,the reason for the above experimental phenomenon is revealed.
作者
崔旭
崔江维
郑齐文
魏莹
李豫东
郭旗
CUI Xu;CUI Jiangwei;ZHENG Qiwen;WEI Ying;LI Yudong;GUO Qi(Key Lab.of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,P.R.China;Xinjiang Key Lab.of Elec.Information Material and Device,Urumgi 830011,P.R.China;University of Chinese Academy of Sciences,Beijing100049,P.R.China)
出处
《微电子学》
CAS
北大核心
2022年第6期1076-1080,共5页
Microelectronics
基金
中国科学院青年创新促进会资助项目(2018473)
中国科学院西部之光资助项目(2019-XBQNXZ-A-003)
国家自然科学基金资助项目(11805268,12075313)
新疆维吾尔自治区自然科学基金资助项目(2021D01E06)
