摘要
对基于GaN的DC/DC变换器进行了总剂量、单粒子及耦合辐照效应研究,讨论了DC/DC变换器在特定负载及电压条件下,输出电压、输出电流、输出效率随不同辐照条件的变化。试验结果表明,使用GaN MOSFET开关管的DC/DC变换器在总剂量、单粒子及耦合辐照条件下,均表现出了优异的抗辐照性能,即输出电压、输出电流、输出效率等性能在三种辐照条件下均没有发生明显的退化。该DC/DC变换器实现了抗总剂量辐照能力大于1 kGy(Si)和抗单粒子LET≥75 MeV·cm^(2)·mg^(-1),表明使用基于GaN的DC/DC变换器未来可广泛应用于航空、航天等供电系统领域。
The total dose,single event particle and coupling irradiation effects of GaN-based DC/DC converter were investigated.The variation of output voltage,output current and output efficiency of DC/DC converter with different irradiation conditions under specific load and voltage conditions were discussed.The experimental results show that the DC/DC converter using GaN MOSFET switch tubes exhibits excellent anti-irradiation performance under total dose,single event particle and coupled irradiation conditions,i.e.,the performance of output voltage,output current and output efficiency of the device do not degrade significantly under three different irradiation conditions.The GaN-based DC/DC converter exhibits super resistance to total dose irradiation greater than 1 kGy(Si)and resistance to single event particle with LET≥75 MeV·cm^(2)·mg^(-1),which indicates that this type of DC/DC converter has great potential applications in the future for power supply systems in aviation and aerospace.
作者
张琴
艾尔肯·阿不都瓦衣提
尹华
张炜楠
邓芳
龙涛
李左翰
ZHANG Qin;AIERKEN Abuduwayiti;YIN Hua;ZHANG Weinan;DENG Fang;LONG Tao;LI Zuohan(School of Energy and Environment Science,Yunnan Normal University,Kunming650500,P.R.China;The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing400060,P.R.China)
出处
《微电子学》
CAS
北大核心
2022年第6期1055-1060,共6页
Microelectronics
基金
国防基础科研计划项目(JCKY2019210C031)
