一种2μm GaAs HBT低相噪宽带VCO

A 2 μm GaAs HBT Low Phase Noise Wideband VCO

提出了一种2μm GaAs HBT工艺的低相噪宽带压控振荡器(VCO)。与CMOS工艺相比,采用HBT工艺设计的VCO噪声性能更好,具有较大的电流放大倍数和跨导。该VCO采用差分Colpitts结构,并对无源器件进行结构优化,在4.1 GHz处,片上螺旋电感的品质因数超过21,实现了较低的相位噪声。通过二极管组成变容阵列,实现了较宽的调谐范围。流片测试结果表明,VCO调谐范围为3.370~4.147 GHz,最大输出功率为-16.13 dBm,直流功耗为43 mW。在振荡频率为4.1 GHz时,相位噪声为-125.2 dBc/Hz@1 MHz。该VCO在相对较宽的调谐范围内实现了较低的相位噪声。

A low phase noise wideband voltage controlled oscillator based on 2μm GaAs HBT process was proposed.Compared with that of CMOS technology,the HBT technology based VCO had better phase noise,larger current amplification and transconductance.The circuit used differential Colpitts structure,and was structurally optimized for passive components.The quality factor of the on-chip spiral inductor reached 21 or higher at 4.1 GHz,achieving lower phase noise.A variable array was formed by diodes to achieve a wide tuning range under this process.It was taped out and tested.The tested results showed that the tuning range of VCO was 3.370 GHz to 4.147 GHz.The maximum output power was-16.13 dBm,and the DC power consumption was 43 mW.At an oscillation frequency of 4.1 GHz,the phase noise was-125.2 dBc/Hz@1 MHz.The VCO achieved lower phase noise over a relatively wide tuning range.