摘要
采用0.18μm CMOS工艺,设计了一种低压差线性稳压器(LDO)。分析了传统LDO在重载高频下电源抑制比(PSR)的缺陷,提出一种带有多级缓冲PSR提升结构的LDO。采用创新的PSR增强结构,使得PSR增强效果与其负载电流成弱相关,从而保证LDO在宽负载范围内具有优秀的高频PSR增强效果。仿真结果表明,负载电流为300 mA时,低频下LDO的PSR为-68 dB,频率为10 MHz时LDO的PSR可达-50 dB。
A low drop-out(LDO)regulator circuit was designed in a 0.18μm CMOS process.The drawbacks of power supply rejection(PSR)of conventional LDOs working at high frequencies and heavy loads were analyzed.A LDO with multi-stage buffer for enhancing the PSR was proposed.The innovative PSR enhancing structure made its PSR enhancing effect weakly relate to the load current,which ensured an excellent high frequency PSR enhancement of LDO over a wide load range.The simulation results showed that when the load current reached 300 mA,the PSR was-68 dB at low frequency,and-50 dB at 10 MHz.
作者
肖皓洋
罗萍
杨朋博
李博
XIAO Haoyang;LUO Ping;YANG Pengbo;LI Bo(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu610054,P.R.China)
出处
《微电子学》
CAS
北大核心
2020年第1期60-64,共5页
Microelectronics
基金
国家自然科学基金NSAF联合基金资助项目(U1630117)
预研资助项目(41426050601).
关键词
低压差线性稳压器
电源抑制比
宽负载范围
高频率
low drop-out regulator
power supply rejection
wide load range
high frequency
