一种SiGe BiCMOS 140 GHz高增益功率放大器

A 140 GHz SiGe BiCMOS High Gain Power Amplifier

基于IHP 130 nm SiGe BiCMOS工艺,设计了一种中心频率为140 GHz的三级Cascode结构的功率放大器。该放大器由两个驱动级和一个输出功率级组成,输入、输出和级间匹配均采用微带线实现。设计中,选用最佳尺寸的晶体管,通过分析得到最佳偏置电流和最佳偏置电压,从而获得最大的电压摆幅,以提高输出功率。仿真结果表明,在120~160 GHz的工作频带中,该放大器的最高增益为28 dB,饱和输出功率为16.2 dBm,功率附加效率为20%,功耗为220 mW。

A three-stage cascode power amplifier with 140 GHz center frequency was designed in the IHP 130 nm SiGe BiCMOS technology.The amplifier consisted of two driver stages and one output power stage,and the input,output and inter-stage matching were all realized by microstrip line.In the design of the power stage,the HBTs with the best size was designed to obtain the best bias current and the best bias voltage through analysis,so as to obtain the maximum voltage swing to improve the output power.The simulation results showed that in 120~160 GHz working frequency band,the Gmax was 28 dB,the Psat was 16.2 dBm,the PAE was 20.5%,and the power consumption was 220 mW.