摘要
采用0.18μm CMOS工艺,设计了一种基于抽头电感的四级分布式放大器。采用抽头电感,减小了片上电感的数量,减小了芯片面积,在保持良好的端口阻抗匹配特性的同时提升了分布式放大器的增益。仿真结果表明,在1.48~15.5 GHz频带范围内,增益为8.6 dB,波动程度为±1.25 dB。版图面积为(0.59×1.1)mm^2。
A four-stage distributed amplifier(DA)based on tapped inductors was designed in a 0.18μm CMOS process.3-port inductors were used in the proposed DA to reduce the number of on-chip inductors,therefore the area of the circuit was reduced.The gain of the DA was improved while maintaining good impedance matching characteristics.The simulation results showed that the proposed DA achieved a 8.6 dB gain from 1.48 GHz to 15.5 GHz with the fluctuation of±1.25 dB.The layout area was(0.59×1.1)mm^2.
作者
苏曼卿
张瑛
邹晓磊
SU Manqing;ZHANG Ying;ZOU Xiaolei(College of Elec.and Optical Engineer.&College of Microelec.,Nanjing Univ.of Posts and Telecommun.,Nanjing210046,P.R.China;National and Local Joint Engineer.Lab.of RF Integr.and Micro-Assembly Technol.,Nanjing Univ.of Posts and Telecommun.,Nanjing210046,P.R.China)
出处
《微电子学》
CAS
北大核心
2020年第1期22-26,共5页
Microelectronics
基金
国家自然科学基金资助项目(61106021)
中国博士后科学基金资助项目(2015M582541).