高效制氢装置阴极结构设计及性能分析

Design and performance analysis of cathode structure for high efficiency hydrogen production unit

使用化学气相输运法(CVT)制备了高质量Sc掺杂SiP晶体,并探究了Sc掺杂对SiP HER活性的影响。结果显示,掺杂Sc后的SiP具有更优异的HER性能,在电流密度为10 mA/cm2时的过电位为112.8 mV,Tafel斜率为85.09 mV/dec,电化学活性表面积为245 cm2,并具有优异的稳定性。该研究为开发具有高效活性的新型催化剂在HER和其他储能领域的应用提供了深入的见解。

In this study,high-quality Sc-doped SiP crystals were synthesized using the chemical vapor transport(CVT)method,and the influence of Sc doping on the HER activity of SiP was investigated.The results indicate that Sc-doped SiP exhibits superior HER performance,featuring an overpotential of 112.8 mV at a current density of 10 mA/cm2,a Tafel slope of 85.09 mV/dec,an electrochemical active surface area of 245 cm2,and remarkable stability.This research provides valuable insights into the development of novel catalysts with highly efficient activity for applications in HER and other energy storage fields.