硒化亚锗薄膜太阳能电池研究进展

Recent Progress in GeSe Thin-Film Solar Cells

硒化亚锗(GeSe)禁带宽度合适(≈1.14 eV),吸光系数大(>10^(5)cm^(−1)),迁移率高(128.7 cm^(2)·V^(-1)·s^(-1)),价带顶中包含反键轨道赋予了其本征缺陷良性,理论光电转换效率可达30%以上,适合于制作高效薄膜太阳能电池;同时GeSe具有毒性低、储量丰富、组分简单及稳定性强等优点,还易于通过低成本的升华法进行薄膜制备,从而在大规模应用方面具有巨大潜力.以GeSe为研究对象,介绍了GeSe基本性质,总结了GeSe薄膜制备研究进展,阐述了GeSe薄膜太阳能电池研究现状,并展望了其今后发展方向与趋势.

Germanium monoselenide(GeSe)is a promising photovoltaic absorber material for thin-film solar cells due to its appropriate bandgap(about 1.14 eV),high absorption coefficient(>10^(5)cm^(−1)at visible light),large carrier mobility(about 128.7 cm^(2)·V^(-1)·s^(-1))and benign defect properties arising from its antibonding states at the valence band maximum.The theoretical Shockley-Quiesser efficiency limit for GeSe single junction solar cells determined by its bandgap is above 30%.Moreover,this simple binary compound possesses earth-abundant,nontoxic constituents and high stability in ambient atmosphere.The easy sublimation feature of GeSe enables the deposition of high-quality films through an industrial close-space sublimation method.The fundamental properties of GeSe with emphasis on the material,optical,electrical,and defect properties are introduced,and then the recent progress of fabrication of GeSe thin films and solar cells is summarized.Finally,a brief perspective on the further development of GeSe thin-film solar cells is provided.