ArF光刻胶成膜树脂研究进展

Research progress of film-forming resin for ArF photoresist

ArF曝光分为干式光刻和浸没式光刻,结合多重曝光技术,分辨率覆盖90~97nm,是芯片制造的主流工艺。ArF光刻胶要求透光率高(193nm波长处)、分辨率高、感度快、抗刻蚀性强、边缘粗糙度小及缺陷少,因此对成膜树脂提出了更高要求。目前报道的ArF光刻胶成膜树脂大致分为三类:(甲基)丙烯酸酯体系;环烯烃体系;马来酸酐体系。主要对三类成膜树脂进行了分类总结,并介绍成膜树脂结构的特点。

ArF exposure is divided into dry and immersion lithography,combined with multiple exposure technologies,the resolution covers 90~97nm,which has been used to manufacture integrated circuits.More requirements for film-forming resin arc proposed to satisfy ArF photoresist performance:high light transmittance(193nm wavelength),high resolution Cast sensitivity,strong etching resistance,low edge roughness and few defects.As so far,three kinds of ArF photoresist film-forming resins have been reported:(methyl)acrylatc-bascd system,norborncnyl system,and maleic anhydride system.This paper mainly classified and summarized the three types of film¬forming resins,and introduced the characteristics of their structures.