Zn掺杂Cu2O纳米薄膜的制备及其光电性能研究

Preparation and photoelectric property of Zn-doped Cu2O thin nanofilm

以醋酸钠(NaAc)和醋酸铜[Cu(Ac)2]作为反应体系,采用电沉积法,在氧化铟锡(ITO)导电玻璃上制备了Zn掺杂的氧化亚铜(Cu2O)(Zn/Cu2O)纳米薄膜,考察了Cu(Ac)2浓度、沉积温度、沉积时间、沉积电压和溶液pH等制备条件对Cu2O纳米薄膜光电性能的影响及乙酸锌[Zn(Ac)2]掺杂量对Zn/Cu2O纳米薄膜光电性能的影响。结果表明,当反应液中含0.04mol/L Cu(Ac)2、0.02mol/L NaAc、0.0064mmol/L十六烷基三甲基溴化铵(CTAB)、0.008mol/L Zn(Ac)2、溶液pH=5.5、沉积温度为50℃时,施加1.4V电压沉积40min,即可制备形貌较好、光电压达0.3054V的Zn/Cu2O薄膜,掺杂Zn(Ac)2的Cu2O纳米薄膜比纯Cu2O纳米薄膜具有更高的光电性能。紫外-可见分光光度计、X射线衍射、场发射扫描电子显微镜和能量色散谱仪等表征结果显示,Zn(Ac)2的掺杂使得Cu2O纳米薄膜紫外吸收峰发生蓝移,择优面发生改变,薄膜表面粗糙度增加,形貌由星型结构变为花簇状结构,样品中Zn元素质量分数和原子分数分别为4.03%和2.78%。

The Cu2O nano-films doped with Zn were prepared on ITO with electrodeposition method using the reaction system of NaAc and Cu(Ac)2as the main reactants.The effects of preparation conditions such as Cu(Ac)2concentration,deposition temperature,deposition time,deposition voltage and solution pH on the photoelectric properties of the samples under simulated solar light radiation were investigated.At the same time,the effect of Zn doping amount on the photoelectric properties of Cu2O thin films was investigated.The results show that the Zn/Cu2O film reached the highest photovoltage of 0.3054Vunder the reaction conditions of 50℃deposition temperature,1.4V deposition voltage for 40min in electrolyte of containing 0.04mol/L Cu(Ac)2,0.02mol/L NaAc,0.0064mmol/L CTAB,0.008mol/L Zn(Ac)2and solution pH 5.5.Zn doping had higher photoelectric properties than pure Cu2O thin films.The characterization results of ultraviolet-visible spectrophotometer(UV-Vis),the X-ray diffractometer(XRD),energy dispersive spectrometer(EDS),and scanning electron microscope(SEM)indicated that Zn doping made the UV absorption peak of Cu2O thin film samples occured blue shift,the preferred surface changed,the surface roughness increased,and the morphology changed from star structure to flower cluster structure,the mass percentage and atomic percentage of Zn in the sample were 4.03%and 2.78%,respectively.