溅射压强对WSe_(2)纳米薄膜形貌及光电性能的影响

Effect of Sputtering Pressure on Morphology and Photoelectric Properties of WSe_(2)Nanofilms

采用射频(RF)磁控溅射技术在Si(100)衬底上制备WSe_(2)纳米薄膜,研究在不同制备压强(2.0、2.5、3.0 Pa)下WSe_(2)纳米薄膜的形貌及光电性质变化.采用扫描电子显微镜(SEM)、能谱仪(EDS)、X射线衍射仪(XRD)、光致发光谱(PL)、霍尔效应等测试对薄膜样品进行基本性质表征.SEM测试结果表明:溅射压强的改变对薄膜形貌有显著影响,随着压强的增加“蠕虫”状结构更加明显.进一步研究WSe_(2)的生长取向,XRD测试结果表明WSe_(2)薄膜在(008)晶面优先生长,证明压强的不同会改变WSe_(2)的晶体结构,提高其结晶性和光吸收特性.此外电学性能测试表明,WSe_(2)纳米薄膜的载流子浓度和霍尔系数可以通过改变压强来调节.体现了磁控溅射技术制备的WSe_(2)具有可控性好,易于重复等优点,在构建多功能WSe_(2)器件领域中具有很好的应用前景.

WSe_(2)nanothin films were prepared on Si(100)substrates by RF magnetron sputtering.The morphology and photoelectric properties of WSe_(2)nanothin films were investigated under different preparation pressures(2.0、2.5、3.0 Pa).The film samples were characterized by scanning electron microscopy(SEM),energy dispersive spectroscopy(EDS),X-ray diffraction(XRD),photoluminescence spectroscopy(PL)and Hall effect.SEM test results show that the change of sputtering pressure has a significant effect on the morphology of thin films,and the"worm"structure becomes more obvious with the increase of pressure.XRD results show that the WSe_(2)film grows preferentially on the(008)crystal plane,which proves that pressure changes the crystal structure of the WSe_(2)and improves its crystallinity and optical absorption properties.In addition,electrical performance tests show that the carrier concentration and Hall coefficient of WSe_(2)nanofilms can be adjusted by changing the pressure.This shows that the WSe_(2)prepared by magnetron sputtering technology has the advantages of good controllability and easy repetition,and has a good application prospect in the field of building multifunctional WSe_(2)devices.