高响应905nm硅雪崩光电二极管设计

Design and Properties of Silicon Avalanche Photodiodes

阐述n+-p-π-p+外平面结构APD的工作原理和设计考虑,其感光面积为0.2~0.8mm。这些光电二极管被优化用于检测905nm辐射,并在该范围内实现了优异的参数-高增益、低噪声、高检测率。

The principles of operation and design considerations concerning APD by n+-p-π-p+epiplanar structure are introduced in this paper.The diameters of photosensitive area range from 0.2 mm to 0.8 mm.These photodiodes are optimised for detection of 905 nm radiation and in that range achieve excellent parameters,high gain,low noise,high detectivity.