摘要
此处介绍了集成门极换流晶闸管(IGCT)的结构特点,通过建模分析结构,分别从提高阻断特性、开通关断特性及动态均匀性方面进行了设计,并以仿真结果指导生产,优化工艺,提高硅片掺杂、寿命及形貌等参数均匀性,研制了3 kA/4 500 V非对称IGCT器件。产品进行各项静、动态参数测试,串联压接成阀组经过可靠性测试、模块型式试验,现已应用于工程。
The structural characteristics of integrated gate commutated thyristor(IGCT) is introduced.Modeling and analysis its structure,analysis and design from blocking characteristics,turn-on and turn-off characteristics and dynamic uniformity,guide the production and optimization process with simulation results.The parameter uniformity of silicon doping,lifetime and morphology is improved,and the 3 kA/4 500 V IGCT device is successfully developed.The product carries out static and dynamic parameter tests.The IGCT has passed the reliability test and the module type test,and has been applied in engineering.
作者
王峰瀛
张婷婷
种晓辉
杨俊艳
WANG Feng-ying;ZHANG Ting-ting;CHONG Xiao-hui;YANG Jun-yan(Xi'an PERI Power Semiconductor Converting Technology Co.,Ltd.,Xi'an 710077,China)
出处
《电力电子技术》
CSCD
北大核心
2020年第1期107-109,共3页
Power Electronics
基金
陕西省重点研发计划(2017ZDXM-GY-124,20-18ZDXM-GY-009).
关键词
集成门极换流晶闸管
硅片掺杂
阀组
integrated gate commutated thyristor
silicon doping
valve block
