W波段三维异构集成有源电扫描阵列设计技术

Design Technology of W-band Active Electronically Scanned Array Based on 3D Heterogeneous Integration

针对高数据率无线通信以及高分辨率成像雷达对毫米波微系统提出小尺寸、高集成度和二维宽角电扫描的需求,传统设计方法和工艺技术难以胜任。探索了可扩展晶圆级相控阵设计方法和工艺技术,解决了W波段低剖面、二维宽角有源电扫描阵列(Active Electronically Scanned Array,AESA)雷达的集成难题。采用三层硅通孔(Through Silicon Via,TSV)转接板堆叠将16颗4通道锗硅(SiGe)芯片与贴片天线单元进行三维异构集成,实现了W波段8×8单元二维有源电扫描阵列晶圆封装。封装尺寸为18mm×19mm×0.93mm,接口形式采用球栅阵列(Ball Grid Array,BGA)。测试结果表明,波束在2GHz带宽内无栅瓣扫描范围可达±45°,实测结果与仿真结果相吻合。研究结果验证了TSV转接板三维异构集成技术是解决W波段二维有源电扫描阵列集成难题的有效技术途径,所采用的“电路-封装”协同设计仿真可作为类似毫米波微系统的设计参考。

According to the requirements of small size,high integration and 2 D wide angle electronically scanning for millimeter wave microsystem proposed by high data-rate wireless communication and high-resolution imaging radar,the traditional design and process technology are difficult to complete.In this paper,the design and process technology of scalable wafer level phased array are explored for solving the integration problem of W-band low profile,2 D wide angle active electronically scanned array(AESA)radar.By using a three layer through silicon via(TSV)interposer,the 164-channel SiGe chips and patch antenna units are stacked for 3 D heterogeneous integration,the W-band 8×8 unit 2 D AESA wafer package is implemented.This package size is 18 mm×19 mm×0.93 mm,ball grid array(BGA)is used to be the interconnection.The test results show that the beam scanning range without grating lobes can reach±45°in the 2 GHz bandwidth,and the measured results are consistent with the simulation results.The research results confirm that the TSV interposer 3 D heterogeneous integration technology is an effective technical approach to solve the problem of W-band 2 D AESA integration,and the“circuit-package”co-design and co-simulation method can be used as a reference for the design of similar millimeter wave microsystems.