摘要
Memristive heterostructures,composed of reduced graphene oxide with different degree of reduction,were demonstrated through a simple method of‘direct electron-beam writing’on graphene oxide.Irradiation with an electron beam at various doses and accelerating voltages made it possible to define highand low-conductivity graphene-oxide areas.The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range(<1 V).The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.
Memristive heterostructures, composed of reduced graphene oxide with different degree of reduction,were demonstrated through a simple method of ‘direct electron-beam writing’ on graphene oxide. Irradiation with an electron beam at various doses and accelerating voltages made it possible to define highand low-conductivity graphene-oxide areas. The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range(< 1 V). The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.
基金
supported financially by the Russian Foundation of Basic Research(Nos.19-29-03050 and 18-29-19120)
the National Research Foundation of Korea(Nos.2016R1A6A1A03012877,2017R1D1A1B03035102 and 2017R1A2B4004281).
