摘要
基于TSMC 65nm CMOS工艺,设计了一种低相噪宽调谐范围的电压控制振荡器(VCO)。VCO的负电阻部分创新性地使用由NMOS和PMOS晶体管组成的电流复用拓扑结构,谐振开关结构用于实现宽调谐范围和高频振荡时保持较为稳定的压控增益(Kvco)。电路的尾电流部分采用POMS电流镜结构用于减小晶体管闪烁噪声对VCO相位噪声的影响。在1.2 V电源电压下,压控振荡器的功耗为4.5 m W,1.72 GHz频率处相位噪声达到-112 d Bc/Hz@100 k Hz。该LC VCO的宽调谐范围和良好的相位噪声性能较好地用于各种PLL电路中。
This letter presents a wide-tuning-range and low phase noise voltage controlled oscillator(VCO)implemented by TSMC 65 nm CMOS process.A new type of negative-resistance part of the VCO consisting of a NMOS and a PMOS transistor forms a current-reuse topology,and the resonator-switching topology is also adopted to achieved to wide-tuning range and stable voltage control gain during high frequency oscillation.POMS current mirror structure is used in the tail current part of the circuit to reduce the influence of transistor flicker noise on VCO phase noise.Operating at 1.2 V supply voltage,the power consumption of the VCO is 4.5 m W,the resulting phase noise is-112 d Bc/Hz at 100 kHz offset form the 1.72 GHz oscillation frequency.The wide tuning range and good phase noise performance of the LC VCO can be used in various PLL circuits.
作者
奉荣
姜丹丹
FENG Rong;JIANG Dandan(College of Communication Engineering,Chengdu University of Information Technology,Chengdu 610225,China)
出处
《成都信息工程大学学报》
2020年第5期509-513,共5页
Journal of Chengdu University of Information Technology
基金
四川省科技厅基金资助项目(18SYXHZ0076,19SYXHZ0030)