1550nm InAs/GaAs量子点调Q光纤激光器

1 550 nm InAs/GaAs Quantum Dots Q-Switched Fiber Laser

调Q光纤激光器在光纤传感、激光雷达、激光加工和光纤通信等众多方面有着广泛的应用。半导体量子点(QD)由于具有较高的损伤阈值和宽光谱特性,是一种优良的可饱和吸收体(SA),但是目前制备发光中心波长为1550 nm的QD SA依然是一个巨大的挑战。通过在分子束外延(MBE)生长InAs QD过程中加入两次间断制备了1550 nm InAs/GaAs量子点半导体可饱和吸收镜(QD-SESAM),并通过构建光纤直线腔,研制出发光中心波长约为1550 nm的被动调Q光纤激光器。该激光器最大输出功率约为2.5 mW,实现了55 kHz的重复频率,同时达到了1.45μs的脉冲宽度和45.36 nJ的单脉冲能量,表现出了InAs/GaAs QD材料在1550 nm调Q光纤激光器应用中的巨大潜力。

The Q-switched fiber laser has been widely used in many applications such as fiber sen-sing,laser radar,laser processing and fiber communication.Semiconductor quantum dots(QDs)are excellent saturable absorbers(SAs)due to their high damage threshold and wide spectral characteristics.However,it is still a great challenge to fabricate the QD SA with a luminescence center wavelength of 1550 nm.The 1550 nm InAs/GaAs quantum dot semiconductor saturable absorber mirror(QD-SESAM)was fabricated,in which two steps growth interruption was introduced before and after InAs QDs molecular beam epitaxy(MBE)growth.And a passively 1550 nm Q-switched fiber laser with a luminescence central wavelength of about 1550 nm was developed by constructing a fiber linear cavity.The laser exhibits the the maximum output power of about 2.5 mW,the repetition frequency of 55 kHz,the pulse width of 1.45μs and the single pulse energy of 45.36 nJ,demonstrating the great potential of InAs/GaAs QD materials in the application of 1550 nm Q-switched fiber lasers.