一种用于5G移动通信基站的大功率射频开关

High Power RF Switch for 5G Mobile Communication Base Stations

基于180 nm绝缘体上硅(SOI)CMOS工艺,设计了一款大功率、低插入损耗的单刀双掷(SPDT)反射式射频开关。提出了一种体区自适应偏置技术,无需偏置电阻对开关管体区进行偏置。采用并联电容补偿技术优化最大输入功率,在长期演进(LTE)9 dB峰均比(PAR)信号输入下,发射通道平均承受功率可达20 W。在3.5 GHz芯片发射通道的插入损耗为0.49 dB,0.1 dB压缩点的输出功率为47 dBm,隔离度为38 dB。在3.5 GHz芯片接收通道的插入损耗为0.43 dB,0.1 dB压缩点的输出功率为31 dBm,隔离度为38 dB。该射频开关芯片适用于5G移动通信LTE基站。

Based on the 180 nm silicon-on-insulator(SOI)CMOS process,a single-pole double-throw(SPDT)reflective RF switch with high power and low insertion loss was designed.A body self-adapting bias technique was proposed to remove the bias resistor at the body of the switch FET.The shunt capacitor compensation technology was applied to optimize the maximum input power.The average transmission channel power can reach 20 W under the 9 dB long-term evolution(LTE)peak-average ratio(PAR)input signal.The chip transmission channel has a low insertion loss of 0.49 dB,an output power of 0.1 dB compression point of 47 dBm,and an isolation of 38 dB at 3.5 GHz.The receive channel has a low insertion loss of 0.43 dB,an output power of 0.1 dB compression point of 31 dBm,and an isolation of 38 dB at 3.5 GHz.The RF switch is suitable for the 5 G mobile communication LTE base stations.