摘要
采用增强型GaAs赝配高电子迁移率晶体管(PHEMT)工艺,设计了一款具有超低噪声系数、低功耗的放大器芯片。采用电流复用型共源结构,源极加入负反馈电感,输入级采用低损耗的片外匹配结构,降低了噪声系数,提高了增益。采用有源偏置电路,提高了芯片电流一致性。设计过程中对封装管壳、键合丝等建模仿真,增益、噪声等测试结果与仿真结果基本一致。该芯片采用4.0 mm×4.0 mm×0.8 mm扁平无引线封装,芯片直流功耗仅为36 mW,在卫星导航工作频段内增益大于30 dB,噪声系数小于0.55 dB。该芯片具有噪声性能好、功耗低、增益高等优点,可以用于各类GPS和卫星导航终端。
An amplifier chip with ultra-low noise figure and low power consumption was designed with enhanced GaAs pseudomorphic high electron mobility transistor(PHEMT)process.The current multiplexing common source structure was adopted,the negative feedback inductor was connected to the source,and the input stage was adopted with the low loss off-chip matching structure,which reduces the noise figure and improves the gain.The active bias circuit was adopted to improve the chip current consistency.During the design process,the packaged shell,bonding wire,etc.were modeled and simulated.And the gain and noise test results are basically consistent with the simulation results.The chip adopted a 4.0 mm×4.0 mm×0.8 mm flat leadless package.The DC power consumption of the chip is only 36 mW,the gain in the satellite navigation working frequency band is greater than 30 dB,and the noise figure is less than 0.55 dB.The chip can be used in various GPS and satellite navigation terminals with good noise performance,low power consumption and high gain.
作者
张晓朋
高博
陈雪龙
李朋
Zhang Xiaopeng;Gao Bo;Chen Xuelong;Li Peng(North-China Integrated Circuit Co.,Ltd.,Shijiazhuang 050200,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China)
出处
《半导体技术》
CAS
北大核心
2020年第2期122-127,共6页
Semiconductor Technology