GaN功率开关器件研究现状

Research Status of GaN Power Switching Devices

第三代半导体材料氮化镓(GaN)具有宽禁带、高临界击穿场强、高电子迁移率、高饱和电子漂移速度等优良特性,基于GaN材料的功率开关器件在高速、大功率领域具有广阔的应用前景。概述了GaN功率开关器件的研究现状及最新进展。从材料外延与器件结构切入,详细介绍了Si基GaN外延晶圆、自支撑GaN垂直结构场效应晶体管(FET)器件和增强型GaN功率器件的实现方法、结构设计及制备工艺研究等GaN功率器件热门研究方向。讨论了GaN功率开关器件面临的挑战。最后对Si基GaN外延晶圆、增强型GaN功率开关器件产业化等发展趋势进行了分析与展望。

The third-generation semiconductor material gallium nitride(GaN)has excellent properties such as wide bandgap,high critical breakdown field strength,high electron mobility and high satura-ted electron drift velocity.GaN materials based power switching devices have broad application prospects in high-speed and high-power fields.The research status and latest development of GaN power switching devices are summarized.From the material epitaxy and device structure,the realization methods,structure design and preparation process of GaN-on-Si epitaxial wafers,GaN-on-GaN vertical structure field effect transistors(FETs)and enhancement mode GaN power devices and other popular research directions of GaN power devices are introduced in detail.The challenges faced by GaN power switching devices are discussed.Finally,the development trend of GaN-on-Si epitaxial wafers and the industrialization of enhancement mode GaN power switching devices are analyzed and prospected.