Sm^3+掺杂SrBi4Ti4O15–Bi4Ti3O(12)压电陶瓷的结构、电学和光致发光性能

Effect of Sm^3+ Doping on Structural, Electrical and Photoluminescence Properties of SrBi4Ti4O15–Bi4Ti3O12 Piezoelectric Ceramics

采用固相法制备Sm^3+掺杂SrBi8–xSmxTi7O(27)(SBT–BIT–x Sm3+,0≤x≤0.50)共生铋层状陶瓷,研究了不同掺杂量的Sm3+对样品的结构、介电、压电以及光致发光性能的影响。结果表明:所有陶瓷样品均为单一的共生铋层状结构,XRD精修和Ramam结果显示Sm3+掺杂引起样品晶格畸变的减小,适量的Sm3+掺杂降低了介电损耗tanδ,提升了压电常数d33,当x=0.30时,综合电性能最佳:压电常数d33=16.3 pC/N,tanδ=0.90%。在407 nm近紫外光的激发下,SBT–BIT–x Sm^3+陶瓷样品在598 nm处存在最强的红橙光发射,当x=0.15时,发光强度达到最佳,Sm3+掺杂SBT–BIT共生铋层状陶瓷在光-电多功能器件等领域中具有潜在的应用前景。

Sm3+doped SrBi8–xSmxTi7O(27)(SBT–BIT–x Sm3+,0≤x≤0.50)inter-growth bismuth layer–structured ceramics were prepared by a conventional solid-state method.The effect of Sm3+doping on the structural,electrical and photoluminescence properties of SBT–BIT–x Sm3+ceramics were investigated.All the samples show a single inter–growth bismuth layer–structure.Based on the results by the Rietveld analysis and Raman spectroscopy,the lattice distortion decreases.The dielectric loss(tanδ)decreases and piezoelectric constant(d33)increases with the increase of Sm3+doping content.SBT–BIT–x Sm3+ceramic with x of 0.30 exhibits an optimum electrical behavior,i.e.,d33=16.3 p C/N,and tanδ=0.90%.Moreover,Under a near ultraviolet excitation at 407 nm,a most intense red orange emission appears at 598 nm in SBT–BIT–x Sm3+ceramics.The optimized emission intensity was obtained when x=0.15 for SBT-BIT-x Sm3+ceramic.The results show that Sm3+doped SBT–BIT–x Sm3+inter–growth bismuth layer–structured ceramics have potential applications in the field of optoelectronic multifunctional devices.