大尺寸GaSe单晶生长和光学性能

Growth and Optical Properties of Big-sized GaSe Single Crystals

通过双温区法合成了GaSe多晶原料,单次合成量可达300 g以上。通过垂直Bridgman–Stockbarger法生长了直径40 mm、长度130 mm的GaSe单晶体,测定了热学和光学性能。结果显示:吸收系数小于1 cm^–1的透过波段为0.64μm^17.80μm,吸收系数小于0.1 cm^–1的透过波段为0.64μm^12.82μm;太赫兹光谱显示有2个吸收峰,分别在0.58 THz和1.10 THz处,吸收系数均小于5.5 cm^–1;GaSe单晶体的激光损伤阈值为3.2 J/cm^2。

GaSe is one of novel mid,far-IR and THz nonlinear optical materials with the excellent comprehensive performance.GaSe polycrystalline with a mass of 300 g was synthesized by a two-temperature zone method.GaSe single crystals with 40 mm in diameter and 130 mm in length were obtained via a vertical Bridgman-Stockbarger(B-S)technique.The thermal and optical properties were investigated.The transparency range is from 0.64μm to 17.80μm at the absorption level of 1 cm^-1.The absorption from 0.64μm to 12.82μm is less than 0.1 cm^-1.The THz absorption spectra show two absorption peaks at 0.58 THz and 1.10 THz,and the absorption coefficients both are below 5.5 cm^-1.The laser damage threshold of GaSe single crystal is 3.2 J/cm^2.