氧化镓晶体不同晶面的纳米力学性能

Nanomechanical Properties of β-Ga2O3 with Different Crystal Planes

为了分析易解理的脆性氧化镓晶体的精密加工过程中材料去除机理,采用金刚石压头、G200型纳米压痕仪,分别对氧化镓晶体的(100)和(010)2个主要晶面的纳米力学性能进行了试验研究。纳米压痕试验发现:2个晶面都有"pop-in"现象,首次出现pop-in的载荷分别为:4.31 m N和5.42 m N。通过变载荷纳米划痕试验和VK-X110激光显微系统观测,发现2个晶面都有"pile-up"现象,刻划过程中期均出现了塑性域加工特征,(100)和(010)晶面的塑性域加工切削深度范围分别是96.5~576.8 nm和84.6~421.6 nm。

In order to analyze the material removal mechanism in the precision machining process of the cleavable brittle gallium oxide crystal,a diamond indenter was used in a model G200 nanoindenter to determine the nanomechanical properties of two main crystal faces(100)and(010)ofβ-Ga2 O3,respectively.Based on the nanoindentation test,the crystal faces both have a"pop-in"phenomenon.The first pop-in loads are 4.31 mN and 5.42 mN,respectively.Based on the variable load nanoscratch test and atomic force microscopy,the crystal faces both have a"pile-up"phenomenon,and the plastic domain processing features appear in the middle of the scratching process.The scratching depths of the crystal faces are 96.5-576.8 nm and 84.6-421.6 nm,respectively.