高热导率半导体立方砷化硼的研究进展

The Research Progress on The High Thermal Conductivity Semiconductor Cubic Boron Arsenide

根据第一性原理计算的预测结果显示,立方砷化硼(c-BAs)具有仅次于金刚石的超高热导率(1400W/m∗K),具备出色的热管理特性。c-BAs的发现对于电子器件的散热应用具有重要的影响,因此成为当前研究的热点。近年来,通过化学气相传输法(Chemical vapor transmission,CVT)成功合成了高质量的BAs单晶,为研究其性质提供了实验基础。BAs晶体在实验中展现出优异的热导率和双极性迁移率,是目前已知性能最佳的半导体材料,有望成为下一代新型半导体。本文综述了BAs单晶的生长方法、理论计算和物理性质方面的研究进展,并在此基础上,讨论了BAs晶体当前面临的技术挑战以及发展前景。

Based on first-principles calculations,cubic boron arsenide(c-BAs)is predicted to possess an ultrahigh thermal conductivity(1400W/m∗K),second only to diamond,making it an excellent candidate for efficient heat management.The discovery of c-BAs has had a significant impact on thermal dissipation applications in electronic devices,making it a current research hotspot.In recent years,high-quality single crystals of BAs have been successfully synthesized using chemical vapor transport(Chemical vapor transmission,CVT)method,providing an experimental foundation for investigating its properties.BAs crystals have demonstrated outstanding thermal conductivity and bipolar transport characteristics in experiments,making them the best-known semiconductor material in terms of performance and holding potential for the next generation of semiconductors.This article provides an overview of the research progress in growth methods,theoretical calculations,and physical properties of BAs single crystals.Furthermore,we discusses the current technological challenges and prospects for the development of BAs crystals.