MoS_(2)/GaAs异质结光电探测器的制备及性能研究

Preparation and properties of MoS_(2)/GaAs heterojunction photodetectors

使用磁控溅射法在GaAs衬底上制备MoS_(2)薄膜,形成GaAs/MoS_(2)异质结,通过控制磁控溅射的时间来控制薄膜厚度,并对GaAs/MoS_(2)异质结的光电性能进行了研究。结果表明:在溅射时间为20min薄膜厚度为300nm时器件的性能最佳,光电探测器的响应度和比探测率分别为0.107AW^(-1)和3.13×10^(11)Jones,器件对405nm到980nm波长的光都有良好的响应,所制备的器件适合用于近红外光探测。

MoS_(2)thin films were prepared on GaAs substrate by magnetron sputtering method to form GaAs/MoS_(2)heterojunction.The thickness of the thin films was controlled by controlling the time of magnetron sputtering.The photoelectric properties of GaAs/MoS_(2)heterojunction are also studied.The results show that the performance of the device is the best when the sputtering time is 20min and the film thickness is 300nm,the responsivity and specific detection rate of the photodetector are 0.107AW^(-1)and 3.13×10^(11)Jones.The device has good response to the wavelength of 405nm to 980nm,and the prepared device is suitable for near infrared light detection.