金属氧化物IGZO薄膜研究进展

Research progress of metal oxide IGZO thin films

随着科技的进步与生活水平的提高,人们对显示技术的需求也日益增加。铟镓锌氧化物(IGZO)材料具有迁移率高、柔性好、稳定性高、透明度高等优点,是薄膜晶体管(TFT)技术的首选材料。本文详细阐述了IGZO薄膜的基本性能及制备方法,跟踪了IGZO薄膜的最新研究进展,分析了目前存在的问题及各种改性方法的优缺点,最后指明了IGZO薄膜材料在面板显示技术领域的应用前景及发展方向,可为IGZO晶体管的深入研究和产业化应用提供科学参考。

With the progress of science and technology and the improvement of living standard,people’s demand for display technology is increasing day by day.Indium gallium zinc oxide(IGZO)material is the preferred material for thin film transistor(TFT)technology because of its high mobility,good flexibility,high stability and transparency.In this paper,the basic properties and preparation methods of IGZO thin films are described in detail,the latest research progress of IGZO thin films is tracked,the existing problems of IGZO thin films are analyzed,and the advantages and disadvantages of various modification methods and the key research directions in the future are discussed.Finally,the application prospect and development direction of IGZO thin film materials in the field of panel display technology are pointed out,which can provide scientific reference for the in-depth research and industrial application of IGZO transistors.