SiO2薄膜在电荷陷阱型V-NAND中的应用及制备方法

The application andpreparation method of SiO2 film in charging trap V-NAND

电荷陷阱型V-NAND技术具有较低的单位存储成本,优异的写入与读取速度,高可靠性等优点被越来越广泛地使用。SiO2在V-NAND中被广泛用作隔离氧化层,隧穿氧化层,介电层以及离子注入掩模等。本文阐述了电荷陷阱型V-NAND基本存储单元的物理和能带结构,并对写入与擦除过程电子隧穿过程进行分析;对位成本缩减技术(BICS)和阵列存储单元兆级晶体管技术(TCAT)的存储区域的物理结构进行对比,对其存储单元的立体结构进行分析。重点介绍热氧化法,化学气相沉积法和原子层沉积法制备SiO2薄膜的原理的性质,并对三种方法制备SiO2薄膜的物理和电性特征进行分析。

Charging trap V-NAND technology has been used more and more widely because of its low unit storage cost,excellent write and read speed,and high reliability.SiO2 is widely used as an isolation oxide layer,a tunneling oxide layer,a dielectric layer,and an ion implantation mask in V-NAND.The physical structure and energy band structure of the charging trap V-NAND basic memory cell is described,and the electron tunneling process in the write and erase process is also analyzed.The physical structures of the Bit Cost Scalable technology(BICS)and the Terabit Cell Array Transistor the storage area(TCAT)is compared,and the three-dimensional structure of the storage unit are analyzed.The principle of thermal oxidation,chemical vapor deposition,and atomic layer deposition were studied.The physical and electrical characteristics of SiO2 films prepared by three methods were analyzed.