含N+杂环基团整平剂对通孔电镀效果的影响研究

Investigation of throwing power for plating through holes with a leveler containing N+ heterocycle

随着电子产品向着轻、薄、小的方向发展,高厚径比通孔的电镀也变得越来越困难.文章合成了一种含有N+的整平剂,通过对所合成整平剂的电化学特征进行研究,发现此种整平剂能够抑制铜的沉积,且这种沉积效果随对流的变化而变化,具有选择性抑制的特性.为了观察所镀铜层表面的形貌和其最优生长晶相测试了扫描电子显微镜(SEM)和X射线衍射(XRD).将所合成的整平剂进行了哈林槽电镀并计算其TP得到在添加了此种整平剂的通孔中其TP可以提高25%.

With the develop of electronic products,it becomes increasingly difficult to Electroplate high aspect ratio through—hole.Therefore,this paper synthesized a heterocyclic compound leveler containing N+and the electrochemical characteristics of this leveler was carried out.It is found that the leveler can inhibit the deposition of copper,and this deposition effect was selective which can inhibit deposition of copper in mouth of the TH.Scanning electron microscopy(SEM)and X—ray diffraction(XRD)were measured to observe the morphology of the surface of the copper layer and its optimal growth phase.The electroplating of copper was conducted in Haring cell,the TP was increased by 25%in the presence of the leveler compared to none leveler.