SiC纳米材料的形貌调控及其场发射阴极性能

Morphology Control and Field Emission Cathode Properties of SiC Nanomaterials

SiC一维纳米材料,具有良好的电子迁移率、稳定性和可制备性,是下一代重要的场发射阴极材料.通过对近年来SiC一维材料制备的研究,发现SiC的主要结构是纳米线/纳米棒、纳米管和纳米阵列,同时提高SiC场发射性能主要通过三种方式:降低微结构顶端的直径、增加发射点的密度、加入元素进行掺杂.

SiC one-dimensional nanomaterials have good electron mobility,stability and processability,and are the next generation of field emission cathode materials.This paper summarizes the research on the preparation of SiC one-dimensional materials in recent years and finds the main structure of SiC.It is a nanowire/nanorod,a nanotube and a nano-array.At the same time,the SiC field emission performance is improved mainly by three methods:reducing the diameter of the top of the microstructure,increasing the density of the emission point,and adding elements for doping.