微晶硅沉积的射频等离子体辉光发射谱

THE OES IN DEPOSITING MICROCRYSTALLINE SILICON MATERIAL BY RF-PECVD

采用射频等离子体增强化学气相沉积(RF-PECVD)技术在高沉积功率、低衬底温度的条件下沉积微晶 硅薄膜材料。光发射谱(OES)测量技术对等离子体辉光进行在线监测、分析,能够对等离子体中的生成物进行 判别。实验表明,随着硅烷浓度的增加,等离子体中SiH*、Hβ*、Hα*和H2*缓慢增大,而Hα*／SiH*单调下降; 随着辉光功率的增大,Hα*迅速增大,而SiH*、Hβ*和H2*趋于饱和,Hα*／SiH*单调上升;等离子体的辉光强度 主要跟SiH、Hβ*和H2*数量成正比。

The microcrystalline silicon thin film materials were deposited by RF-PECVD technology at high plasma power and low substrate temperature. Measuring the optical emission spectroscopy(OES)could analyze the resultants in plasma. From OES' analysis, the effect of resultants in plasma on growth of microcrystalline silicon was known. The intensity of SiH* 、Hβ*、Hα* and H2* in plasma increase slowly with silane concentration increasing, whereas the ration of HAA* /SiH monotonously is decredsed Ha* increases quickl...