双极晶体管总剂量辐射失效概率

Total Dose Failure Probability of Bipolar Transistors

对三种双极晶体管3DG4C、3DG6D和3DK9D(每种100只)作了失效概率P_F和γ总剂量D关系的研究。辐射实验表明,用Weibull分布可以较好地描述P_F和D的关系。取h(D)/h(O)=80％、70％、50％为器件失效判据,实验结果表明,失效分布曲线取决于失效判据。3DG6D的P_F～D曲线由两种斜率的直线组成,这意味着样品组中存在着不同工艺的器件。失效分布曲线斜率揭示了器件抗总剂量特性的均匀度。它可用来作为器件加固工艺的质量监督。当将P_F～D直线外推到低P_F区时,有些器件失效概率为0.1％和0.01％的失效总剂量仅为几十Gy。

The failure probability Pr related with y total dose was presented for three bipolar trasis-tors 3DG4C, 3DG6D and 3DK9D. It was shown that the />F-Z) relation was better depicted by Weibull function. AFE(I>)AFE(0) = 80%,70% and 50% was taken as the failure criteria for transistors. The experimental results shown that distributing curves depend on failure criteria. The Pr^D curves were comprised of two straights with different slopes. It meant that there were devices with different technology in the samples....