摘要
本文介绍CdTe半导体材料在γ射线辐照下发射近红外光的原理,用“闪光—1”加速器输出的γ脉冲对该样品作了性能测试,获得了有用的数据。实验结果表明,自制的CdTe样品可应用于高γ剂量率的探测中。
The principle of near-infrared emission of CdTe semiconductor materials under y ray irradiation was presented. The sample characteritsics were measured using y pulses from "Flash-I" accelerator and useful data were obtained. The experimental results had shown, that the CdTe sample made by ourselves can be used in high Y dose rate detection.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
1993年第6期373-377,共5页
Nuclear Electronics & Detection Technology
关键词
CDTE
近红外
探测
光纤
CdTe Near-infrared Detection fiber-optic