Ga＿xIn＿（1－X）P外延膜中成份调制对光致发光的影响

Influence of Compositional Modmation on Photoluminescence in Ga_xIn_(1-X)P epilayers

通过用一高分辨、微机控制的三晶体ｘ－射线衍射仪来测量Ｇａ＿ｘＩｎ＿（１－ｘ）Ｐ外延膜中（１１）与（）衍射峰的积分强度差，定量地确定了有序度。讨论Ｇａ＿ｘＩｎ＿（１－ｘ）Ｐ外延膜中有序度与成份调制间的关系。考察了成份调制与施主－受主对复会发光能量间的关联。通过计及施主一受主对在由成份调制所导致的超格子势场中的附加能量，导出了施主一受主对在部分有序相中跃迁时新的能量方程。

The ordering degree is determined quantitatively by measuring the differ-ence of the integrated intensities of(11)and diffraction peaks in Ga_xIn_(1-X)Pepilayers with a high resolution computer-controlled triple-crystal X一ray diffractometer.The relationship between the ordering degree and the compositional modulation inGa_xIn_(1-X)P epilayer is duscussed.The correlation of the compositional modulation with theenergy of the donor-acceptor(DAP) recombination photoluminescence is examined. Taking into consider...