摘要
本文简要探讨高价阳离子Ａ、Ｂ双位取代ＢａＴｉＯ３系固溶体的中温烧结机制，以及其所形成的复合缺陷机构对介电特性的影响，并从实用出发，研制开发了（ＢａＬａ）（ＴｉＮｂ）Ｏ３系ＸＬ１０３片式多层瓷介电容器（ＭＬＣ）资料，其主要的特征参数为：ε（２０℃，１ｋＨｚ）≈１００００；
The medium temperature sintering mechanism of the solid solutions of BaTiO3 system substituted in both sites A & B by high valence positive ions is inquired into and the effect of the engendered composite defect structures on dielectric properties is investigated in this paper. Aiming at the practical applications we have developed XL103 multilayer chip capacitance (MLC) ceramic material of (BaLa) (TiNb)O3 system. The main characteristics of the material are as follows: ε(20℃. 1kHz)= 10000; in the range of ...
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1996年第3期57-61,共5页
Journal of South China University of Technology(Natural Science Edition)
基金
国家自然科学基金
广东省自然科学基金
关键词
中温烧结
复合缺陷
电子补偿
缺位补偿
非谐势阱
s: medium temperature sintering
composite defect
electron compensation
vacancy compensation
non-harmonic potential well
