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Si基毫米波共面波导建模 被引量:1

Si-based Millimeter-Wave CPW Modeling
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摘要 本文阐述了毫米波CMOS集成电路的关键技术之一,Si基共面波导(CPW)的机理和等效电路模型。通过电磁仿真(HFSS软件)提取CPW的S参数并计算相应的分布参数,建立了基于硅衬底的标准0.18μmCMOS工艺的毫米波CPW模型。实现了频率可达40GHz,特性阻抗分别为36、50和70Ω的CPW元件库。 This paper describes one of the key technologies of the mm- wave CMOS integrated circuits, the mechanism and the equiva- lent circuits model of the Si substrate based mm- wave coplanar waveguide (CPW). The S- parameters of the CPW are estimated by EM simulation ( software HFSS ) with the correspondent distributed parameters calculated also. Based on a Si substrate in standard 0.18μm CMOS process, the model of the mm- wave CPW is established. The CPW element library is achieved with the frequency up to 40 GH...
出处 《微计算机信息》 北大核心 2008年第1期192-194,共3页 Control & Automation
基金 上海-应用材料研究与发展基金资助(No.0506)由上海市科学技术委员会与美国应用材料公司共同设立
关键词 共面波导 毫米波 CMOS 建模 CPW millimeter wave CMOS modeling
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参考文献9

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共引文献6

同被引文献9

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