摘要
本文阐述了毫米波CMOS集成电路的关键技术之一,Si基共面波导(CPW)的机理和等效电路模型。通过电磁仿真(HFSS软件)提取CPW的S参数并计算相应的分布参数,建立了基于硅衬底的标准0.18μmCMOS工艺的毫米波CPW模型。实现了频率可达40GHz,特性阻抗分别为36、50和70Ω的CPW元件库。
This paper describes one of the key technologies of the mm- wave CMOS integrated circuits, the mechanism and the equiva- lent circuits model of the Si substrate based mm- wave coplanar waveguide (CPW). The S- parameters of the CPW are estimated by EM simulation ( software HFSS ) with the correspondent distributed parameters calculated also. Based on a Si substrate in standard 0.18μm CMOS process, the model of the mm- wave CPW is established. The CPW element library is achieved with the frequency up to 40 GH...
出处
《微计算机信息》
北大核心
2008年第1期192-194,共3页
Control & Automation
基金
上海-应用材料研究与发展基金资助(No.0506)由上海市科学技术委员会与美国应用材料公司共同设立