国产SOI 1750A微处理器抗辐射效应模拟试验

Simulation experiment of tolerance of irradiation about domestic SOI 1750A microprocessor

文章介绍了对国内首次研制成功的航天用SOI工艺16位微处理器1750A进行抗辐射效应地面模拟试验的情况,分析了试验结果,初步预估了该器件的抗辐射效应能力,为该器件在空间环境中的应用提供了依据。

.This paper introduces the ground-based simulation experiment of tolerance of irradiation about 16bit SOI 1750A microprocessor, which is firstly made in china and designed for spacecraft. The test results are analyzed, and according to the results, the radiation sensitivity of the 1750A is predicted. The use of the 1750A in the space environment can according to the results.