螯合剂对酸性抛光液中铜离子沉积的影响

Effect of Chelating Agent on the Deposition of Cu in Acid Polishing Slurry

研究了几种螯合剂减少金属铜在晶片表面沉积的作用.将晶片放入含有或不含螯合剂的酸性抛光液中浸泡10min,用GFAAS测定表面沉积铜的浓度.结果表明,PAA、HEDP和AMPS的加入都能明显减少金属铜在硅片表面的沉积量,去除率分别为83%、79%和44%.进一步的研究发现,PAA过量时,即使螯合剂或者铜离子的浓度成倍增加,金属铜沉积量减少率变化不大.因此,加入过量PAA螯合剂不仅能够减少金属铜的沉积量,而且可以减弱沉积量的波动,增强工艺的稳定性.

The application of some liquid chelating agents for reducing Cu deposition on silicon wafer surface was studied.The concentration of deposited copper was determined by GFAAS after dipping silicon wafer into acid polishing slurries whether contain different chelating agent or not.The results indicate that all the chelating agents of PAA,HEDP and AMPS can obviously reduce Cu deposition on silicon wafer surface,and the ability to reduce Cu deposition by 83%,79%,44% respectively.When PAA was overloaded,Cu depos...