期刊文献+

0.35μm CMOS 4位1 Gsample/s全并行模数转换器设计 被引量:3

1 Gsample/s 4 bit Flash ADC in 0.35μm CMOS
下载PDF
导出
摘要 介绍了一种基于0.35μm CMOS工艺的4位最大采样速率为1GHz的全并行结构模数转换器的设计.因为在高采样率的情况下,比较器的亚稳态问题降低了模数转换器的无杂散动态范围,在本次设计中对其进行了优化.后仿真结果表明,输入信号为22.949MHz,在1GHz采样率的情况下,信噪比达到25.08dB,积分非线性和微分非线性分别小于0.025LSB和0.01LSB,无杂散动态范围达到32.91dB.芯片采用具有两层多晶硅的0.35μmCMOS工艺设计,总面积为0.84mm2. A 4bit CMOS analog-to-digital converter with a maximum acquisition speed of 1 GHz is presented.The problem of meta-stability has got special attention in this design,since this problem degrades the Spurious-Free Dynamic Range(SFDR)at high sampling frequencies.Simulated Signal to Noise Ratio(SNR)is 25.08 dB at 1 GHz clock and fin=22.949 MHz.Simulated Integral Nonlinearity(INL)is less than 0.025 Least Significant Bit(LSB),Differential Nonlinearity(DNL)is less than 0.01 LSB and SFDR is 32.91 dB.The chip has be...
出处 《电子器件》 CAS 2007年第2期403-406,共4页 Chinese Journal of Electron Devices
基金 国家自然科学基金资助(60576028)
关键词 模数转换器 高速 全并行 亚稳态 CMOS工艺 analog-to-digital converter high-speed flash meta-stability CMOS process
  • 相关文献

参考文献7

  • 1[1]Yao Libin,Michiel Steyaert and Willy Sansen ESAT-MICAS,A 1.8-V 6-bit Flash ADC with Rail-to-Rail Input Range in 0.18μm CMOS[C]//ASIC,2003.Processdings.5th International Conference on Volume 1,21-24 Oct.2003:677-680.
  • 2[2]Choi M and Abidi A.A 6-bit 1.3-Gsanmle/s Flash ADC in 0.35-μm CMOS[J],IEEE J.Solid-State Circuits,Dec.2001(36):1847-1858.
  • 3[3]Uyttenhove Koen and Steyaert Michiel S J.A 1.8-V 6-Bit 1.3-GHz Flash ADC in 0.25-μm CMOS[J].IEEE J.Solid-State Circuits,7 July 2003(38):1115-1122.
  • 4[4]Venes A and de Plassche R J V.An 80-MHz 80-mW 8-b CMOS Folding A/D Converter wity Distributed T/H Preprocessing[C]//IEEE Int.Solid-State Circuits Conf.Dig.Tech.Papers,San Francisco,CA,Feb.1996,pp.241-243.
  • 5[5]Uyttenhove K and Steyaert M.A 6-bit CMOS Very High Acquisition Speed Flash ADC with Digital Error Correction[C]//Proc.IEEE Custom Integrated Circuits Conf.,Orlando,FL,May 2000:120-124.
  • 6[6]Behzad Razavi,Principles of Data Conversion System Design[M].December 1994:272 Hardcover,Edition:1.
  • 7[7]Portmann C L and Meng T HY.Power Efficient Metastability Error Correction in CMOS Flash A/D Converters[J].IEEE Journal of Solid-State Circuits,Aug.1996,32(8):1132-1140.

同被引文献4

  • 1RAZAVIB.模拟CMOS集成电路设计[M].陈贵灿,程军,译.西安:西安交通大学出版社,2002:319-320.
  • 2SHAKER M O, GOSH S, BAYOUMI M A. A 1-GS/s 6-bit flash ADC in 90 nm CMOS [C]//52nd IEEE Int Midwest Symp Circ Syst. Cancun, Mexico. 2009.. 144-147.
  • 3MISHRA S, VIDYARTHI A, AKASHE S. A novel folding technique for 3 bit flash ADC in nanoscale [C] //3rd Int Conf ACCT. Rohtak, India. 2013 307-311.
  • 4REDDY M S, RAHAMAN S T. An effective 6-bit flash ADC using low power CMOS technology [C] ff 15th ICACT. Rajampet, India. 2013: 1-4.

引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部