摘要
可靠性设计是现代集成电路设计需要考虑的一个重要问题.对影响电路可靠性的一个最主要效应——P-MOSFET的NBTI效应进行了系统的介绍.给出了不同电压、温度下器件性能随时间变化趋势的最新研究成果.最后介绍了SPICE考虑器件器件退化的电路模拟流程.在器件尺寸日益缩小的今天,这些将成为集成电路设计关注的焦点.
Reliability analysis is one of the most important factors in modern integrated circuit design.The most important effect affecting circuit reliability-NBTI was introduced.The tendency of the degradation with different voltage and temperature stress enumerated.The simulation flow of SPICE considering reliability is given.With the scale of the device decreasing,these will be a main consideration in circuit design gradually.
出处
《电子器件》
CAS
2007年第2期407-410,共4页
Chinese Journal of Electron Devices