700V VDMOS设计

Design of 700V VDMOS

主要研究高压VDMOS器件的设计方法.理论分析了VDMOS结构参数与其主要性能的关系.按700V VDMOS器件击穿电压和导通电阻的设计要求给出基本的结构参数,并在此基础上通过数值模拟的方法进行优化.重点讨论外延电阻率及厚度,栅的长度和PBODY结深对VDMOS器件BV和Rdson的影响,最终得到了满足器件设计要求的最佳结构参数.同时还分析了集成电路中的VDMOS与普通分立VDMOS器件在器件结构设计上的主要差别.

A 700V VDMOS was designed.Above of all,the relationship between the VDMOS structure and character was analyzed.The influence of EPI、Poly CD and Pbody Depth on BV and Rdson was discussed.Then an initial structure was presented according to the calculation based on the theory.Finally the appropriate structure was obtained after a series of simulation by which the BV and Rdson of device were optimized.At the end of this paper the differences between the VDMOS in Power IC and discrete device were mentioned in d...