AlGaN/GaN高电子迁移率晶体管大信号I-V特性模型(英文)

Analytical Model of Large Signal I-V Characteristics for AlGaN/GaN High Electron Mobility Transistors

对非线性电流源Ids(Vgs,Vds)的准确描述是Al GaN/GaN HEMT大信号模型的最重要部分之一.Materka模型考虑了夹断电压与Vds的关系,其模型参数只有三个,但是Ids与Vgs的平方关系不符合实际,计算结果与测量数据有误差.我们在考虑了栅电压与漏电流的关系及不同栅压区漏电流随漏电压斜率改变的基础上,提出了改进的高电子迁移率晶体管(HEMT)的直流特性模型.采用这个模型,计算了Al GaN/GaN HEMT器件的大信号I-V特性,并与实际测量数据进行了比较.实验结果表明改进的模型更精确,Ids与Vgs的呈2.5次方的指数关系.

The accurate description to the nonlinear current source Ids(Vgs,Vds)is one of the most important part of the large signal model for AlGaN/GaN HEMTs.The relationship between the pinch-off voltage and Vdshas been taken into account and there are only three parameters in this model.However the square dependence of Idson Vgs does not match HEMTs very well.The discrepancy still exists.Considering the relationship between the gate voltage and the drain current as well as the slope changes of drain current Ids wi...