短沟道铝栅CMOS器件及工艺研究

Research on Short Aluminium-Gate CMOS Device and Process

利用计算机模拟软件Tsuprem4、Medici以及流片实验开发了短沟道铝栅CMOS器件及其工艺流程.对铝栅1.5μm短沟道CMOS工艺进行器件结构、工艺和电气性能等参数的进行了大量的模拟和流片实验,最后在提出的工艺平台上成功流水了1.5μm铝栅CMOS.流片测试的阈值电压为±0.6V,击穿达到11V,各项指标参数的模拟与实际测试误差在5%以内,器件的各项指标达到了量产的要求.

The Short Aluminium-gate CMOS Device and process were proposed by using the simulators Tsuprem4, Medici and experiments. We got the satisfactory parameters such as the structure, technology and electric performance for the 1.5 μm Aluminium-gate CMOS with the simulation and experiments. The simple and effective technology succeeded in taping out on existing production line. The threshold of the presented CMOS is ±0.6 V, breakdown reaches 11 V. The simulations of every parameter are in good agreement with exp...