期刊文献+

短沟道铝栅CMOS器件及工艺研究

Research on Short Aluminium-Gate CMOS Device and Process
下载PDF
导出
摘要 利用计算机模拟软件Tsuprem4、Medici以及流片实验开发了短沟道铝栅CMOS器件及其工艺流程.对铝栅1.5μm短沟道CMOS工艺进行器件结构、工艺和电气性能等参数的进行了大量的模拟和流片实验,最后在提出的工艺平台上成功流水了1.5μm铝栅CMOS.流片测试的阈值电压为±0.6V,击穿达到11V,各项指标参数的模拟与实际测试误差在5%以内,器件的各项指标达到了量产的要求. The Short Aluminium-gate CMOS Device and process were proposed by using the simulators Tsuprem4, Medici and experiments. We got the satisfactory parameters such as the structure, technology and electric performance for the 1.5 μm Aluminium-gate CMOS with the simulation and experiments. The simple and effective technology succeeded in taping out on existing production line. The threshold of the presented CMOS is ±0.6 V, breakdown reaches 11 V. The simulations of every parameter are in good agreement with exp...
出处 《电子器件》 CAS 2007年第2期373-375,共3页 Chinese Journal of Electron Devices
关键词 短沟道 工艺模拟 铝栅CMOS工艺 short gate process simulation metal-gate CMOS technology
  • 相关文献

参考文献9

  • 1[1]Havemann R H,Eklund R H.Process Integration Issues for Submicron BiCMOS Technology[J].Solid-State Technology,1992,35(6):71-76.
  • 2[2]Combs S R Scalable Retrograde P-Well CMOS Technology[C].IEDM Tech Dig,Washington DC,1981:346-349.
  • 3[4]Hobler G,Selberherr S.Two-Dimensional Modeling of Ion Implantation Induced Point Defects[J].IEEE Trans Computer-Aided Design,1988,7(2):174-180.
  • 4[5]Hu G J,Ting C Y,Taur Y,et al.Design and Fabrication of P-Channel FET for 1μm CMOS Technology[C]//IEDM Tech Dig,San Francisco,1982:710-713.
  • 5[6]Wolf S.Silicon Processing for the VLSI Era.Volume 3:The Submicon MOSFET[M].California:Lattice Press,1995.232-240.
  • 6[7]Chen J Y.CMOS-The Emerging VLSI Technology[J].IEEE Circuits and Devices Magazine,1986,2(22):16-31.
  • 7[8]Ogura S,Tsang P,Walker W,et al.Design and Characteristics of the Lightly-Doped Drain-Source(LDD) Insulated Gate FET[J].IEEE Trans Electron Devices,1980,27(8):1359-1367.
  • 8[9]Shibata T,Hieda K,Sato M,et al.Optimally Designed Process for Submicrometer MOSFETs[J].IEEE Trans Electron Devices,1982,29(4):531-535.
  • 9[10]Rung R D,Dell C J,Walker L G.A Retrograde P-Well for Higher Density CMOS[J].IEEE Trans Electron Devices,1981.28(10):1115-1119.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部