摘要
为了消除X波段低噪声放大器(LNA)设计中在低频端产生的振荡,提出了在输入级HJ-FET管的栅极和源极之间跨接一定长度微带线的方法.通过优化微带线的长度从而消除了多级级联LNA电路中低频端产生的振荡,同时改善了电路的匹配特性,降低了输入端电压驻波比,使带内输入电压驻波比由1.868降低到1.403,提高了LNA工作的稳定性,而噪声性能仅有很小变化.
An effective method for eliminating low frequency oscillation in X-Band low noise amplifier(LNA)is proposed,which uses a microstrip line with specific length to connect gate and source electrodes of HJ-FET in the input stage.The low frequency oscillation in our multistage X-band LNA circuit is eliminated by optimizing the length of the microstrip line.At the same time,the matching of the circuit is improved.Compared with the circuit without the microstrip line in the input stage,the input VSWR decreases fro...
出处
《电子器件》
CAS
2007年第2期507-510,共4页
Chinese Journal of Electron Devices
关键词
LNA
低频噪声
X波段
LNA
low frequency oscillation
X-band
