摘要
讨论一种发生在铝互连线工艺中的较为少见的VIA(通孔)失效现象:淀积VIA氮化钛阻挡层后出现下层铝的上窜.通过对于失效的VIA进行失效分析,我们在VIA孔底部发现了一层变异的金属层.EDS成分分析显示它的主要成分是铝,并包含一些钛化铝的成分.这种VIA失效现象的根本成因是在淀积VIA氮化钛阻挡层时,下面金属层的铝被挤入至VIA孔导致VIA的主要填充成分钨无法顺利填入.
We will discuss a new kind of VIA failure mechanism:Al protrusion Found in VIA after CVD TiN.Failure analysis of failed VIA shows an abnormal layer at the bottom of the VIA hole.EDS results the main component of this layer is Al with clusters of titanium aluminide.The root cause of this failure is Al extrusion into VIA during the preheat step before CVD TiN deposition and W can t fill into VIA,therefore.
出处
《电子器件》
CAS
2007年第5期1580-1582,1586,共4页
Chinese Journal of Electron Devices
关键词
通孔
铝上窜
氮化钛
VIA
Al protrusion
CVD TiN
