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一种改进结构的GaAs微波PIN二极管 被引量：2

A Kind of GaAs Microwave PIN Diode with the Improved Structure
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摘要 设计并制作了高性能GaAs微波PIN二极管.分析了GaAsPIN二极管的结构对其性能的影响,并根据分析结果改进了GaAsPIN二极管的结构.制作了常见结构和改进结构的GaAsPIN二极管,比较了不同结构的GaAsPIN二极管的测试数据,从而验证了理论分析的结果.改进后的GaAsPIN二极管制作工艺更为简单,具有良好的高频特性,截止频率达到1520.5GHz.这种改进结构的GaAs微波PIN二极管在微波电路中具有良好的应用前景. A kind of high performance GaAs microwave PIN diode was designed and fabricated.The relationship between the performance and the structure of GaAs PIN diode is analyzed.An improved structure of GaAs PIN diode is present.GaAs PIN diodes with different structures are fabricated,testing data of PIN diodes with usual and improved structures are compared,and the results of analysis in theory are proved.The improved GaAs PIN diodes are easier to fabricate,and has better high frequency performance.The cut-off freq...
作者 杨浩 吴茹菲 尹军舰 张海英
机构地区 中国科学院微电子研究所
出处 《电子器件》 CAS 2007年第5期1552-1554,共3页 Chinese Journal of Electron Devices
关键词 微波 PIN二极管 砷化镓 新结构 microwave PIN diodes GaAs new structure
分类号 TN311 [电子电信—物理电子学]
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参考文献8

  • 1[1]高葆新等.微波集成电路[M].北京:国防工业出版社.1995.
  • 2[2]Bartle D.C,McDermott G,Tayrani R,et al,Broadband Microwave GaAs Monolithic Switches[C]//Microwave and Millimetre Wave Monolithic Integrated Circuits,IEE Colloquium on,Nov 1988,5:1-4.
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同被引文献6

  • 1陈新宇,冯欧,蒋幼泉,许正荣,黄子乾,李拂晓.1～26．5GHz GaAs PIN单刀单掷开关单片[J].固体电子学研究与进展,2007,27(1):37-39. 被引量：2
  • 2Kevin W, Kobayashi, Liem Tran, et al. Streit, a 50-30 GHz broadband co-planer waveguide SPDT PIN diode switch with 45 dB isolation. IEEE Microwave and Guided Wave Letters,1995, 5 (2).
  • 3Sun Pingping,Upadhyaya P,Jeong D H, et al. A novel SiGe PIN SPST switch for broadband T/R module.IEEE Microwave and Wireless Components Letters, 2007,17 (5).
  • 4White J F. Semiconductor Control. Artech House,1997.
  • 5Peak S W, Kang H I, Jeon K I, et al.1-26 GHz high power pin diode switch. IEEE MTT-S International Microwave Symposium Digest, 2000 (1).
  • 6黄贞松,宋艳,许庆,杨磊.一种高集成射频接收前端[J].固体电子学研究与进展,2015,35(4):352-356. 被引量：4

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电子器件
2007年 第5期

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