反应烧结压力对Bi_2Te_3半导体材料组织与性能的影响

Effect of Sinter Press on the Microstructure and Properties of Bi_2Te_3 Semiconductor Cooling Material

以Bi和Te的单质为原料,用固相反应烧结法制备Bi2Te3P型半导体制冷材料.实验采用X射线衍射仪、莱卡光学显微镜分析压制工艺对材料组织性能的影响.实验结果表明:压力增加,塞贝克系数减少.压力较小时有BiTe存在,压力增加BiTe减少,Bi2Te3增加。

Bismuth telluride P type semiconductor refrigerating material was fabricated by Solid-State Reaction and Agglomeration using Bi and Te. Analyzing effect of pressing on microstructure and properties by XRD, Leica microscope, it is shown that seebeck coefficient decrease with pressing pressure increasing. BiTe is existed when given a small pressing. BiTe decreases with pressing pressure increasing. BiTe almost vanishes when press gets 300 KN.