摘要
采用0.5μmpHEMT工艺研制了Gilbert式单片混频器,设计采用了电流注入技术及跨导级源端负反馈技术,在C波段测试表明:变频增益大于1.5dB,单边带噪声系数典型值为12.5dB,变频带宽约为DC～1GHz,所需本振功率实测值为1.6dBm。
The Gilbert mixer employs current-injection technique and source negative feedback at the RF input stage.Finally measured conversion gain is 1.5 dB to 1.7 dB,with an typical SSB noise figure of 12.5 dB.IF band-width ranges from DC to 1 GHz.LO driver power is as low as 1.6 dBm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2007年第2期194-198,共5页
Research & Progress of SSE
