摘要
在半导体材料中,谷轨道耦合作用使得施主能级发生分裂(Valley-orbit splitting)。通过引进电子在分裂能级上的配分函数和综合平均能量增量,得到了适用于施主能级分裂的分布函数。利用新得到的分布函数对掺As的Si和含N的6H-SiC进行最小二乘曲线拟合,得到的杂质热电离能与光电离能完全吻合。
In semiconductors,there is the phenomenon of valley-orbit splitting.However,the existed distribution function for electrons bound to donors does not include it.In this paper,a new distribution function including valley-orbit splitting is established by introducing a new partition function and an ensemble average increment of all split donor levels.It is found that the thermal ionization energy and the optical ionization energy for donors are uniform when the least-squares fit is carried out with the new dis...
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2007年第2期147-150,180,共5页
Research & Progress of SSE
关键词
施主能级分裂
配分函数
综合平均能量增量
分布函数
valley-orbit splitting
partition function
ensemble average increment
distribution function
