7.5～9.5GHz AlGaN/GaN HEMT内匹配微波功率管

7.5～9.5 GHz AlGaN/GaN HEMT Internal Matched Microwave Power Transistor

报道了研制的1mm栅宽的AlGaN/GaN HEMT内匹配微波功率管,在32V漏偏压下在7.5～9.5GHz频率范围内输出功率大于5W,功率附加效率典型值为30%,功率增益大于6dB,带内增益平坦度为±0.4dB,带内最大输出功率为6W。

An internal matched microwave power AlGaN/GaN HEMT with 1 mm gate width is reported in this paper.Under the drain bias voltage of 32 V the transistor delivers output power of more than 5 W with a power gain of more than 6 dB and the typical power-added efficiency of 30% in frequency from 7.5 to 9.5 GHz.The flatness of power gain across the band is within ±0.4 dB.The maximum output power of AlGaN/GaN HEMT reaches 6 W.